Latency Insertion Method for FinFET Simulation Incorporating Parasitic Source/Drain Resistances

Yi Zhou, Jose E. Schutt-Aine

University of Illinois at Urbana Champaign, Urbana, USA

CANCELLED: Adaptive Artificial Neural Networks for Power Loss Prediction in SiC MOSFETs

Giovanni Di Nuzzo¹, Ajay Poonjal Pai¹, YiChe Su²

¹Sanan Semiconductor, Munich, Germany; ²Sanan Semiconductor, Changsha, China

Simulation Analysis on Thermal Performance of Lidless Fan-out Package

Yongbo Wu¹, Jian Cai^1,2, Changming Song¹, Lin Tan¹, Qian Wang^1,2

¹School of Integrated Circuits, Tsinghua University, Beijing, China, Peoples Republic of; ²Beijing National Research Center for Information Science and Technology, Beijing, China, Peoples Republic of